MF152800 - SEMI MF1528 - Test Method for Measuring Boron Contamination in Heavily Doped N-Type Silicon Substrates by Secondary Ion Mass Spectrometry StdPbc-1123 can be used to facilitate

can be used to facilitate inclusion of such additional physical properties and suitable test methods as may be required in the Specification

コンピュータおよび通信システム

SEMI M31-0698 (first published)

originally published November 2005

SEMI G63-95 (first published)

MF152800 - SEMI MF1528 - Test Method for Measuring Boron Contamination in Heavily Doped N-Type Silicon Substrates by Secondary Ion Mass Spectrometry StdPbc-1123 can be used to facilitate1 Purpose 1. 1 Frequently it is essential to control the boron level in heavily doped n type substrates used to make epitaxial wafers because the boron contamination can result in autodoping at the epitaxial silicon substrate interface. 1. 2 SIMS can measure the boron contamination in heavily doped n type substrates. 1. 3 This Test Method can be used for process control, research and development, and materials acceptance purposes. 2 Scope 2. 1 This