MF136600 - SEMI MF1366 - Test Method for Measuring Oxygen Concentration in Heavily Doped Silicon Substrates by Secondary Ion Mass Spectrometry StdTpc-Chemical & Gas Testing originally published November 2007

originally published November 2007

SEMI E114-0302E (Reapproved 0309)

本標準應用在背光模組。標準中包含使用在背光模組元件的專用術語，以及背光模組工業、面板、和設備工業所用之檢驗和量測的專用術語。其他領域則由其他的

SEMI E84-0301 (technical revision)

This Document can be used as a Guide for equipment manufacturers during the design and testing of their equipment and by those who either use or produce reticles and other EES items

MF136600 - SEMI MF1366 - Test Method for Measuring Oxygen Concentration in Heavily Doped Silicon Substrates by Secondary Ion Mass Spectrometry StdTpc-Chemical & Gas Testing originally published November 2007This Test Method covers the determination of total oxygen concentration in the bulk of single crystal silicon substrates using SIMS. This Test Method can be used for silicon in which the dopant concentrations are less than 0. 2% (1 atoms cm3 1020 atoms cm3) for boron, antimony, arsenic, and phosphorus (refer to SEMI MF723). This Test Method is especially applicable for silicon that has resistivity between 0. 0012 cm and 1 cm for p type silicon and