M03700 - SEMI M37 - Test Method for Measuring Etch Pit Density (EPD) in Low Dislocation Density Indium Phosphide Wafers StdPbc-1214 7-95 (first published)

7-95 (first published)

SEMI M17-0704 (technical revision)

SEMI E68-0997 (first published)

本スタンダードでは，ムラに対する人間の視覚特性を人間工学的な手法で調査した結果に基づき，ムラ度合を表す単位としてムラの楕円長径と濃さ（コントラスト）の関数で表わすことを提案する。

Synchronous message delivery is chosen when application communication requires message consumption and execution to be completed before a new message is allowed

M03700 - SEMI M37 - Test Method for Measuring Etch Pit Density (EPD) in Low Dislocation Density Indium Phosphide Wafers StdPbc-1214 7-95 (first published)This test method was technically approved by the global Compound Semiconductor Committee and is the direct responsibility of the Japanese Compound Semiconductor Materials Committee. Current edition approved by the Japanese Regional Standards Committee on March 17, 1999. Initially available at www. semi. org April 1999; to be published June 1999. This document provides a method to measure etch pit density (EPD) in low dislocation density InP wafers.