HB01100 - SEMI HB11 - Specification for Sapphire Single Crystal Ingot Intended for Use for Manufacturing HB-LED Wafers Revision:SEMI HB11-0819 - Superseded このスタンダードは以下を期待される：

このスタンダードは以下を期待される：

評価要員の資質

本スタンダードは，global Physical Interfaces & Carriers Committeeで技術的に承認されている。現版は2009年9月4日，global Audits and Reviews Subcommitteeにて発行が承認された。2009年10月にwww

their hazards

This Guide is intended for use in both establishing new Specifications within SEMI as well as verification of performance to SEMI Specifications

HB01100 - SEMI HB11 - Specification for Sapphire Single Crystal Ingot Intended for Use for Manufacturing HB-LED Wafers Revision:SEMI HB11-0819 - Superseded このスタンダードは以下を期待される：The sapphire single crystal ingot is used as a substrate material for HB LED applications. To permit common processing equipment to be used in multiple device fabrication lines, it is essential for the sapphire single crystal ingot specifications to be standardized. This Specification provides the characteristics of sapphire single crystal ingot, consisting of the physical specification, orientation, shape, and defect standard. This Specification is