Si (100) 10x10x0.5mm, 1SP, P type B doped, R:1-10 ohm-cm GaAs It can prevent the precision

It can prevent the precision and brittle crystal wafer from damage and contamination during shipping and storing

94mm  Flatness = 0

24o Bi-LSAT Substrate Specifications

temperature resolution is ±3

Click the picture below to see the battery electrode coated by Automatic Film Coater with 12"W x 24"L Glass Bed and 250mm Adjustable Doctor Blade - MSK-AFA-II

Si (100) 10x10x0.5mm, 1SP, P type B doped, R:1-10 ohm-cm GaAs It can prevent the precisionSpecifications: Single crystal: Si Conductive type: P type, B doped Resistivity: 1 10 ohm cm (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument.) Size: 10 x10 x 0. 5 mm Orientation: (100) Polish: one side polished Surface roughness: < 5A RMS Related Products Other Crystal wafer A Z Plasma Cleaner Wafer Containers Dicing saw Film Coater