US$ 85000.00
Si (110) 10x10x0.5mm, 1SP, N type undoped, R >1000 ohm-cm - SiUe101005S1R1000 High-throughput Characterization & XRF Discharging: - 10 - 60
$17.52
Description
Discharging: - 10 - 60 oC (14 - 140 o F)
the relative positive pressure level
71mm in thickness (Diameter the same to the o-ring's I
Ball mill or ground the powder to the size of 32~75 microns powder before pressing
please choose our Digital Vacuum Gauge
Si (110) 10x10x0.5mm, 1SP, N type undoped, R >1000 ohm-cm - SiUe101005S1R1000 High-throughput Characterization & XRF Discharging: - 10 - 60Specifications: Single crystal: Si Conductive type: N typre, undoped Resistivity: > 1000 ohm cm Size: 10 x 10 x 0. 5 mm Orientation: (110) Polish: one side polished Surface roughness: < 5A RMS Related Products Other Crystal wafer A Z Plasma Cleaner Wafer Containers Dicing saw Film Coater
Shipping Notes
- Free Standard Shipping on $100+ Orders to the USA.
- Except Preorder products are shipped in 48 hours.
- Delivery to the USA:
- Standard Shipping : 3-10 business days
- If time is of the essence, please consider selecting expedited delivery for faster service.
You may also like
US$ 22000.00
US$ 92000.00
US$ 92000.00
US$ 80000.00
US$ 36000.00
US$ 37500.00
US$ 26000.00
US$ 21750.00
US$ 27000.00
US$ 1350.00
US$ 6250.00
US$ 8250.00
US$ 99000.00
US$ 1600.00
US$ 1145.00
US$ 1825.00
US$ 2050.00
US$ 5700.00
US$ 24750.00