, N type ) 2"x 200 nm - FmAlNonSiPc50D05C1FT200nmUS YSZ Crystal Boundary: 45o ( +/-0AlN Template on Silicon is made by a PVDNC method. AlN template on Silicon is a cost effective way to replace AlN single crystal substrate. Specifications Useful area: 90% Nominal AlN thickness: 200nm 5%, one side coated, undoped AlN film Front Surface: As grown Back surface: Silicon as received AlN orientation: C plane (00. 1) Macro Defect Density: <5 cm^2 Wafer base: Silicon [111] N type, 2" dia x0. 5 mm, Resistivity: <5 ohm cm, one side polished"> , N type ) 2"x 200 nm - FmAlNonSiPc50D05C1FT200nmUS YSZ Crystal Boundary: 45o ( +/-0"> , N type ) 2"x 200 nm - FmAlNonSiPc50D05C1FT200nmUS YSZ Crystal Boundary: 45o ( +/-0AlN Template on Silicon is made by a PVDNC method. AlN template on Silicon is a cost effective way to replace AlN single crystal substrate. Specifications Useful area: 90% Nominal AlN thickness: 200nm 5%, one side coated, undoped AlN film Front Surface: As grown Back surface: Silicon as received AlN orientation: C plane (00. 1) Macro Defect Density: <5 cm^2 Wafer base: Silicon [111] N type, 2" dia x0. 5 mm, Resistivity: <5 ohm cm, one side polished"> , N type ) 2"x 200 nm - FmAlNonSiPc50D05C1FT200nmUS YSZ Crystal Boundary: 45o ( +/-0"> , N type ) 2"x 200 nm - FmAlNonSiPc50D05C1FT200nmUS YSZ Crystal Boundary: 45o ( +/-0AlN Template on Silicon is made by a PVDNC method. AlN template on Silicon is a cost effective way to replace AlN single crystal substrate. Specifications Useful area: 90% Nominal AlN thickness: 200nm 5%, one side coated, undoped AlN film Front Surface: As grown Back surface: Silicon as received AlN orientation: C plane (00. 1) Macro Defect Density: <5 cm^2 Wafer base: Silicon [111] N type, 2" dia x0. 5 mm, Resistivity: <5 ohm cm, one side polished"> Undoped AlN Template on 2" Silicon ( Si <111> , N type ) 2"x 200 nm - FmAlNonSiPc50D05C1FT200nmUS YSZ Crystal Boundary: 45o ( +/-0 – www.hermes-technologie.de

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Undoped AlN Template on 2" Silicon ( Si <111> , N type ) 2"x 200 nm - FmAlNonSiPc50D05C1FT200nmUS YSZ Crystal Boundary: 45o ( +/-0

$165.74

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, N type ) 2"x 200 nm - FmAlNonSiPc50D05C1FT200nmUS YSZ Crystal Boundary: 45o ( +/-0">
Description

Crystal Boundary:                     45o ( +/-0

PTFE SPlit Cell

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and various coating at a lower cost

Insulating gasket is made of PET

Undoped AlN Template on 2" Silicon ( Si <111> , N type ) 2"x 200 nm - FmAlNonSiPc50D05C1FT200nmUS YSZ Crystal Boundary: 45o ( +/-0AlN Template on Silicon is made by a PVDNC method. AlN template on Silicon is a cost effective way to replace AlN single crystal substrate. Specifications Useful area: 90% Nominal AlN thickness: 200nm 5%, one side coated, undoped AlN film Front Surface: As grown Back surface: Silicon as received AlN orientation: C plane (00. 1) Macro Defect Density: <5 cm^2 Wafer base: Silicon [111] N type, 2" dia x0. 5 mm, Resistivity: <5 ohm cm, one side polished

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