Flat: <110> Polished: One side polished Surface roughness: < 5 A Packing: 1000 class clean room with 100 class plastic bag MgAl2O4 ( spinel ) single crystals are widely used for bulk acoustic wave and microwave devices and fast IC epitaxial substrates. It is also found that MgAl2O4 is a good substrate for III V nitrides device."> Flat: <110> Polished: One side polished Surface roughness: < 5 A Packing: 1000 class clean room with 100 class plastic bag MgAl2O4 ( spinel ) single crystals are widely used for bulk acoustic wave and microwave devices and fast IC epitaxial substrates. It is also found that MgAl2O4 is a good substrate for III V nitrides device."> Flat: <110> Polished: One side polished Surface roughness: < 5 A Packing: 1000 class clean room with 100 class plastic bag MgAl2O4 ( spinel ) single crystals are widely used for bulk acoustic wave and microwave devices and fast IC epitaxial substrates. It is also found that MgAl2O4 is a good substrate for III V nitrides device."> MgAl2O4 (100) with 1.5 degree miscut in <011> with flat<110)2" dia x 0.5mm 1 side polished-1 Voltage range +5 V Impurities (wt%) – www.hermes-technologie.de

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MgAl2O4 (100) with 1.5 degree miscut in <011> with flat<110)2" dia x 0.5mm 1 side polished-1 Voltage range +5 V Impurities (wt%)

$284.62

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Impurities (wt%)

Doping:                           Ga doped

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MgAl2O4 (100) with 1.5 degree miscut in <011> with flat<110)2" dia x 0.5mm 1 side polished-1 Voltage range +5 V Impurities (wt%)MgAl2O4 single crystal substrate Size: 2" Diameter x 0. 5mm + 0. 05mm Orientation: (100) with 1. 5 degree miscut in <011> Flat: <110> Polished: One side polished Surface roughness: < 5 A Packing: 1000 class clean room with 100 class plastic bag MgAl2O4 ( spinel ) single crystals are widely used for bulk acoustic wave and microwave devices and fast IC epitaxial substrates. It is also found that MgAl2O4 is a good substrate for III V nitrides device.

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