. SF<0 11> Dopping: undoped, Conducting type: P type. Polish: Two side EPI ready polished Resistivity: N A Mobility: 600 700cm^2 Vs Carrier concentration: (1 3)x10^17 ohm. cm EPD : <2000 cm^ 2 Packing: 1000 class clean room in a single wafer container Surface finish (RMS or Ra) : < 5A Dopant Type Carrier Concentration ( cm 3) Mobility ( cm2 V. Sec)"> . SF<0 11> Dopping: undoped, Conducting type: P type. Polish: Two side EPI ready polished Resistivity: N A Mobility: 600 700cm^2 Vs Carrier concentration: (1 3)x10^17 ohm. cm EPD : <2000 cm^ 2 Packing: 1000 class clean room in a single wafer container Surface finish (RMS or Ra) : < 5A Dopant Type Carrier Concentration ( cm 3) Mobility ( cm2 V. Sec)"> . SF<0 11> Dopping: undoped, Conducting type: P type. Polish: Two side EPI ready polished Resistivity: N A Mobility: 600 700cm^2 Vs Carrier concentration: (1 3)x10^17 ohm. cm EPD : <2000 cm^ 2 Packing: 1000 class clean room in a single wafer container Surface finish (RMS or Ra) : < 5A Dopant Type Carrier Concentration ( cm 3) Mobility ( cm2 V. Sec)"> GaSb Wafer (111)-B, undoped,P-type 2"x0.5 mm ,2sp Anode PTC PTC resistance: 12 - – www.hermes-technologie.de

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GaSb Wafer (111)-B, undoped,P-type 2"x0.5 mm ,2sp Anode PTC PTC resistance: 12 -

$459.43

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Description

PTC PTC resistance: 12 - 15 m

(Optional) The vacuum pump and fittings are not included

For pressing sticky metal powders such as Al

78 kg Force

8 pt 0 2 MicrosoftInternetExplorer4 Layers from outside (Shiny) to inside (Mat)

GaSb Wafer (111)-B, undoped,P-type 2"x0.5 mm ,2sp Anode PTC PTC resistance: 12 -Wafer Specifications:. Size: 2" diameter x 0. 5 mm, Orientation: (111) B Flats: SEMI PF <01 1>. SF<0 11> Dopping: undoped, Conducting type: P type. Polish: Two side EPI ready polished Resistivity: N A Mobility: 600 700cm^2 Vs Carrier concentration: (1 3)x10^17 ohm. cm EPD : <2000 cm^ 2 Packing: 1000 class clean room in a single wafer container Surface finish (RMS or Ra) : < 5A Dopant Type Carrier Concentration ( cm 3) Mobility ( cm2 V. Sec)

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