Ge Substrate: (100) 10x5 x 0.5 mm , 2SP, N type Sb doped,R:0.01-0.05 Ohm.cm Bi4Ge3O12(BGO12) No Insulating gasket

No Insulating gasket

which allows the making of 32 dry pallets with different compositions in one single pressing within 30 minutes

Customized size asseambling is available upon request

The pressure inside the tube chamber will be kept within the desired range

Gold layer thickness: 50nm (+/- 5nm)

Ge Substrate: (100) 10x5 x 0.5 mm , 2SP, N type Sb doped,R:0.01-0.05 Ohm.cm Bi4Ge3O12(BGO12) No Insulating gasketGe Wafer Specification Growing Method: CZ Wafer Size: 10x5 x0. 5 mm Surface Polishing: two sides epi polished Orientation: (100) Surface roughness: RMS or Ra:~ 10 A(By AFM) Doping: Sb doped Conductor type: N type Resistivity: 0. 01 0. 05 Ohm. cm (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument.) Package: under 1000 class clean room in wafer container Related Product Other