(0. 61 3. 25)E7 ohm. cm Mobility: 2090 2470 cm^2 v. s Polish: Two sides polished Ra(Average Roughness) : < 0. 4 nm EPI ready surface and packing"> (0. 61 3. 25)E7 ohm. cm Mobility: 2090 2470 cm^2 v. s Polish: Two sides polished Ra(Average Roughness) : < 0. 4 nm EPI ready surface and packing"> (0. 61 3. 25)E7 ohm. cm Mobility: 2090 2470 cm^2 v. s Polish: Two sides polished Ra(Average Roughness) : < 0. 4 nm EPI ready surface and packing"> InP-VGF Grown (111)A Fe doped, 2"x0.35 mm wafer, 2sp, Semi-insulating Ga2O3-ß 5 mm SiO2/ Si wafer – www.hermes-technologie.de

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InP-VGF Grown (111)A Fe doped, 2"x0.35 mm wafer, 2sp, Semi-insulating Ga2O3-ß 5 mm SiO2/ Si wafer

$419.18

Quantity
Description

5 mm  SiO2/ Si wafer (Prime Grade)

Pressing die installation schematic

Noise level  < 55 dB

Single-side area density: 17

which is of normal nature

InP-VGF Grown (111)A Fe doped, 2"x0.35 mm wafer, 2sp, Semi-insulating Ga2O3-ß 5 mm SiO2/ Si waferInP single crystal wafer Orientation: (111)A Size: 2" diameter x 0. 35mm Doping: Fe doped Conducting type: Semi Insulating Resistivity:>(0. 61 3. 25)E7 ohm. cm Mobility: 2090 2470 cm^2 v. s Polish: Two sides polished Ra(Average Roughness) : < 0. 4 nm EPI ready surface and packing

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