Thermal Oxide Wafer: 300 nm SiO2 Layer on Si (100), 4"dia x 0.525 mm t, N type, As-doped 1SP, R:0.001-0.005 ohm.cm - Fm300SOonSIAsa100D0525C1US K Normal0MicrosoftInternetExplorer4 Precaution: R plane sapphire

Normal0MicrosoftInternetExplorer4 Precaution: R plane sapphire wafer is easy to cleave compared with C plane's

Case Height: 100mm

Polish:              two sides polished

Two temperature controllers are built to control the heating zone independently via K-type thermal couples

Only the rubber needle included in the package is allowed to use for adjusting the set point SP1 and SP2

Thermal Oxide Wafer: 300 nm SiO2 Layer on Si (100), 4"dia x 0.525 mm t, N type, As-doped 1SP, R:0.001-0.005 ohm.cm - Fm300SOonSIAsa100D0525C1US K Normal0MicrosoftInternetExplorer4 Precaution: R plane sapphireThermal oxide Layer Research Grade , about 80 % useful area SiO2 layer on 4'' Silicon wafer Oxide layer thickness: 300 nm ( 3000A) + 10% Refractive index 1. 455 Silicon Wafer Specifications: Conductive type: N type As doped Resistivity: 0. 001 0. 005 ohm. cm (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument.) Size: 4" diameter + 0. 5 mm x 0. 525 mm Orientation: (100) + 1o Polish: