Boron-Doped Diamond on Silicon Substrate Orientation 10-10 It can prevent precision wafer

It can prevent precision wafer or substrate from damage and contamination during shipping and storage

Standard diameter that can be put inside: 19mm Diameter Max

Two types of battery holders are included in the BST8-WA Standard package:

Growth Method: CZ

Please click here to see Dislocation vs Thickness of GaN template

Boron-Doped Diamond on Silicon Substrate Orientation 10-10 It can prevent precision waferA Boron Doped Diamond (BDD) on Silicon Substrate (Si) is a high performance material that combines the excellent properties of diamond with the versatility of silicon. The substrate consists of a conductive silicon wafer that is coated with a thin layer of boron doped diamond. Boron doping introduces p type conductivity to the diamond layer, enhancing its electrical properties and making it suitable for use in electrochemical applications. This