0. 20 um TDD: <1E8 cm^2 Film: Ge epi film Thickness: 0. 5 um + 3% Orientation: (100) Type: N type Dopant concentration: ~5E18 cc Current RMS spec: Ra < 2 nm Related Products Thin Films A Z Crystal wafer A Z Plasma Cleaner Wafer Containers"> 0. 20 um TDD: <1E8 cm^2 Film: Ge epi film Thickness: 0. 5 um + 3% Orientation: (100) Type: N type Dopant concentration: ~5E18 cc Current RMS spec: Ra < 2 nm Related Products Thin Films A Z Crystal wafer A Z Plasma Cleaner Wafer Containers"> 0. 20 um TDD: <1E8 cm^2 Film: Ge epi film Thickness: 0. 5 um + 3% Orientation: (100) Type: N type Dopant concentration: ~5E18 cc Current RMS spec: Ra < 2 nm Related Products Thin Films A Z Crystal wafer A Z Plasma Cleaner Wafer Containers"> 4" N-type Ge epi-film on N-type Silicon Wafer, 0.5 um thickness - FmGeNtypeonSiNtypea101D05C1US Tabs & Foils & Current Collector Please check the package's condition – www.hermes-technologie.de

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4" N-type Ge epi-film on N-type Silicon Wafer, 0.5 um thickness - FmGeNtypeonSiNtypea101D05C1US Tabs & Foils & Current Collector Please check the package's condition

$646.88

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Description

Please check the package's condition upon delivery

Put the calcined powder into the die

coiled polyurethane hose

you need to replace 11mm PTFE Gasket for sealing 1/4 BSPP Connectors (EQ-ORing-PTFE11) in the joint as well

Density is 6 g/cm^3

4" N-type Ge epi-film on N-type Silicon Wafer, 0.5 um thickness - FmGeNtypeonSiNtypea101D05C1US Tabs & Foils & Current Collector Please check the package's conditionSpecifications: Silicon Wafer Type: N P doped Orientation: (100) Size: 4'' dia Thickness: 500 550 um Grade: Prime Flates: 2 SEMI STD on Axis 0 degree off Resistivity: 1 10 ohm. cm Backside: Etch Particles: < 50 @ >0. 20 um TDD: <1E8 cm^2 Film: Ge epi film Thickness: 0. 5 um + 3% Orientation: (100) Type: N type Dopant concentration: ~5E18 cc Current RMS spec: Ra < 2 nm Related Products Thin Films A Z Crystal wafer A Z Plasma Cleaner Wafer Containers

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