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SiC - 6H (0001) 8mm dia. x 0.3 mm th., one side polished Oven Resistivity: >50 Ohms/cm (If you
SiC - 6H (0001) 8mm dia. x 0.3 mm th., one side polished Oven Resistivity: >50 Ohms/cm (If you
$127.86
Description
Resistivity: >50 Ohms/cm (If you would like to measure the resistivity accurately
Case Dimension: 25
Semi-Automatic Winding Machine for Electrodes of Cylinder Cell - MSK-112A-Cylinder
Flow Rate: 8 - 13
660 V~50KA Current 50 A Dimension 43 x 43 mm
SiC - 6H (0001) 8mm dia. x 0.3 mm th., one side polished Oven Resistivity: >50 Ohms/cm (If youSpecifications of Substrate Orientation: <0001> + 0. 5 Dimension: 8mm Dia. x 0. 3mm Polished: One side epi polished Surface Roughness: < 10 A by AFM Typical Properties of Single Crystal SiC Formula weight: 40. 10 Unit Cell: Hexagonal Lattice constant: a =3. 08 A c = 15. 117 A Stacking sequence: ABCACB (6H) Growth Technique: MOCVD Polishing: Silicon face polished Band Gap: 3. 03eV ( Indirect) Conductivity type: N TTV Bow Warp:<25um Micropipe Density:
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