Thick Aluminum Nitride Substrate for RTP Furnace's Sample Holder - EQ-AIN-Holder Orientation 10-14 005 Cu (wt%) <0

005 Cu (wt%) <0

Polished surface: substrate surface is EPI polished via a special CMP procedure with RA < 8 A

000 PSI adjust relief valve is available upon request

and show instant humidity and temperature

EPI polished  on one side or two sides to Ra < 10 Å

Thick Aluminum Nitride Substrate for RTP Furnace's Sample Holder - EQ-AIN-Holder Orientation 10-14 005 Cu (wt%) <0Such unpolished Aluminum Nitride can be placed in the center of holder for holding test samples up to 3" or 5" diam. The excellent temperature uniformity can be achieved in this 3" or 5" diam. area due to the benefit from its high thermal conductivity. Aluminum Nitride Ceramic Substrates Properties Item No. AIN Holder Purity (wt%) 99% (AN5116) Density (g cm3) >3. 26 Thermal Conductivity (W m. K) >170 Thermal Expansion (x10 6 oC) <4. 2 Dielectric