LSAT Single Crystal Substrate (100)/(100) 10x5x1.0mm 1sp - LSATa100510S1US5 Orientation 010 GaAs single crystal wafer

GaAs single crystal wafer

Polishing:                              two  sides  polished

O-ring can be inserted between the lid and jar for wet grinding (ID:90mm

Normal 0 7

Macro Defect Density         <=2 cm-2

LSAT Single Crystal Substrate (100)/(100) 10x5x1.0mm 1sp - LSATa100510S1US5 Orientation 010 GaAs single crystal waferLSAT (LaAlO3)0. 3 (Sr2AlTaO6)0. 7 is a newly developing crystal with peroviskite structure and twin free. LSAT has excellent lattice match with high Tc superconductors and many oxide materials. LSAT has lower melting point and can be grown by CZ technology at lower cost, therefore, it is expected to replace LaAlO3 and SrTiO3 as a common single crystal substrate for epitaxial oxide thin films for gain magnetic ferro electronic and superconductive