InSb (100) 10x10x 0.45 mm, P type, Ge doped, two side polished Orientation 0001 Attention: If a gas cylinder

Attention: If a gas cylinder is used instead of air compressor(pic2)

Please select the width of the slot die from the product option

Carrier Concentration: (1

Position Thickness & accuracy Cutting thickness is controlled by digital micrometer with the accuracy of 0

1  ohm-cm

InSb (100) 10x10x 0.45 mm, P type, Ge doped, two side polished Orientation 0001 Attention: If a gas cylinder10x10x0. 45 mm InSb wafer (P type, Ge doped) Size: 10x10x0. 45 mm Orientation <100> + 0. 5o with two reference flats Polishing: two sides polishd Packing: Sealed under nitrogen with single wafer comtainer in 1000 class clean room Properties Properties Growth method LEC Orientation (100) + 0. 5 o Orientation Flat N A Doping Ge Conductivity type P Type Carrier Concentration 1. 35x10^15 cc @77K Mobility 6300 cm2 Vs EPD <=200 cm 2 Resistivity: 7. 34E 1