LaAlO3, (110) orn. EPI polishing 3" x 0.5mm wafer 1 SP --- MTI Special !!!-1 Te 10-100 cc/min
$540.50
Description
10-100 cc/min
Type/Dopant: P-type undoped
Sintering Temperature: 250oC · 360ºC Max
Notes The recommended distance from source to sensor is 12 inch
The pressure inside the tube chamber will be kept within the desired range
LaAlO3, (110) orn. EPI polishing 3" x 0.5mm wafer 1 SP --- MTI Special !!!-1 Te 10-100 cc/minSubstrate Specifcations: Wafer Size: 3" dia + 0. 5 mm x 0. 5 thickness + 0. 05 mm Wafer Orientation: (110) + 0. 5 Deg Edge Orientation: <001> + 1 Deg with 20 mm Length Polishing: CMP polished with free sub surface damaged Surface finish (RMS or Ra) : < 15A Package: Under 1000 class clean room, and in 100 grade plastic bag in a wafer container. Lattice Constant a=3. 792Pseudo cubic Warning: LaAlO3 crystal has a visible twin on a polished surface, which
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