+ 1 Deg with 20 mm Length Polishing: CMP polished with free sub surface damaged Surface finish (RMS or Ra) : < 15A Package: Under 1000 class clean room, and in 100 grade plastic bag in a wafer container. Lattice Constant a=3. 792Pseudo cubic Warning: LaAlO3 crystal has a visible twin on a polished surface, which"> + 1 Deg with 20 mm Length Polishing: CMP polished with free sub surface damaged Surface finish (RMS or Ra) : < 15A Package: Under 1000 class clean room, and in 100 grade plastic bag in a wafer container. Lattice Constant a=3. 792Pseudo cubic Warning: LaAlO3 crystal has a visible twin on a polished surface, which"> + 1 Deg with 20 mm Length Polishing: CMP polished with free sub surface damaged Surface finish (RMS or Ra) : < 15A Package: Under 1000 class clean room, and in 100 grade plastic bag in a wafer container. Lattice Constant a=3. 792Pseudo cubic Warning: LaAlO3 crystal has a visible twin on a polished surface, which"> LaAlO3, (110) orn. EPI polishing 3" x 0.5mm wafer 1 SP --- MTI Special !!!-1 Te 10-100 cc/min – www.hermes-technologie.de

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LaAlO3, (110) orn. EPI polishing 3" x 0.5mm wafer 1 SP --- MTI Special !!!-1 Te 10-100 cc/min

$540.50

Quantity
Description

10-100 cc/min

Type/Dopant:              P-type undoped

Sintering Temperature: 250oC · 360ºC Max

Notes The recommended distance from source to sensor is 12 inch

The pressure inside the tube chamber will be kept within the desired range

LaAlO3, (110) orn. EPI polishing 3" x 0.5mm wafer 1 SP --- MTI Special !!!-1 Te 10-100 cc/minSubstrate Specifcations: Wafer Size: 3" dia + 0. 5 mm x 0. 5 thickness + 0. 05 mm Wafer Orientation: (110) + 0. 5 Deg Edge Orientation: <001> + 1 Deg with 20 mm Length Polishing: CMP polished with free sub surface damaged Surface finish (RMS or Ra) : < 15A Package: Under 1000 class clean room, and in 100 grade plastic bag in a wafer container. Lattice Constant a=3. 792Pseudo cubic Warning: LaAlO3 crystal has a visible twin on a polished surface, which

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