GaAs (100), N type Te doped, 5 x 5 x 0.35 mm, 1SP Prismatic Cell pic 1 pic 2 pic
$40.19
Description
pic 1 pic 2 pic 3 Warranty 12 months
Application The cylinder cells are grooved it by MSK-500 and then crimped by MSK-510
Powder Milling & Mixer
Working temperature: 1700°C (in air) Max
Cap Height: 4
GaAs (100), N type Te doped, 5 x 5 x 0.35 mm, 1SP Prismatic Cell pic 1 pic 2 picGaAs single crystal wafer Growing Method: VGF Orientation: (100) Size: 5 x 5 x 0. 35 mm Polishing: one side polished Doping: Te doped Conductor type: N type Carrier Concentration: (3. 04 5. 98) x 10^17 cm^3 Mobility: (3330 3850) cm^2 V. S Resistivity: (3. 14 5. 34) E 3 ohm cm EPD: < 5000 cm^2 Note: EPI polishing RMS < 5 Angstrom Related Products Other GaAs InSb Other InAs InP GaSb Wafer Box Film Coater RTP Furnaces
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