Cu Film on Ta/SiO2/ Silicon Wafer, Cu=400 nm Ta=50nm SiO2=300nm, Si(100) P-type B-doped5x5x0.525mm, 1sp Assorted Ra(Average Roughness) : < 0

Ra(Average Roughness) :   < 0

2 side polished

Die Sleeve Height: 50mm

94 36 20 ns @ 470nm

Mobility:                            5350-6380 cm^2/v

Cu Film on Ta/SiO2/ Silicon Wafer, Cu=400 nm Ta=50nm SiO2=300nm, Si(100) P-type B-doped5x5x0.525mm, 1sp Assorted Ra(Average Roughness) : < 0Specifications: Cu coated SiO2 Si Wafer (5x5 mm size) Thickness of polycrystalline Cu <111> film: 400 nm Thickness of Ta diffusion barrier: 50 nm 5x5x0. 5 mm SiO2 Si wafer (Prime Grade) P type, B doped, <100> orientation, SSP Resistivities: 1 20 ohm cm thermal oxide: 300 nm Surface Roughness: as grown Package: One 1000 class clean room with 100 class plastic bag 10 pcs per package for minimum order