Silicon Nitride Pressing Die optional 12/15/20/25 mm I.D. for Hot Pressing up to 1050C - DIE-SiN-XX Voltage range +18.5 V HVMSS-SPC-1-LD

HVMSS-SPC-1-LD

74 dB @ 200 mm distance

please follow the equation below:

KTiOPO4 (KTP)

The smart design allows you to quickly and easily assemble and disassemble electrodes into the cell for test

Silicon Nitride Pressing Die optional 12/15/20/25 mm I.D. for Hot Pressing up to 1050C - DIE-SiN-XX Voltage range +18.5 V HVMSS-SPC-1-LDDIE SiN XX is the dry pressing die made of silicon nitride (Si3N4) with a pressure of 150MPa max. and a working temperature of 1050C Max SPECIFICATIONS: Material Made of high purity silicon nitride (Si3N4) The whole set die includes One Die Sleeve with optional ID and pressing rod 10 mm dia. ID 30 mm O. D 40mm H 12 mm dia. ID 30 mm O. D 40mm H 15 mm dia. ID 40 mm O. D 40mm H 20 mm dia. ID 40 mm O. D 40mm H 25 mm dia. ID 40 mm O. D 40mm H One short