50 ohm.cm Metal Foils Capable for KSL-1650X-GS65 furnaceGe Wafer Specification Growing Method: CZ Orientation: (110) + _0. 5 Deg. Wafer Size: 2" dia x 500 microns Surface Polishing: one side optical polished Surface finish (RMS or Ra) : < 30A Doping: Undoped Conductor type: N type Resistivity: > 50Ohms cm (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument.) EPD: < 5E2 cm^2 Package: under 1000 class clean room Typical Properties:"> 50 ohm.cm Metal Foils Capable for KSL-1650X-GS65 furnace"> 50 ohm.cm Metal Foils Capable for KSL-1650X-GS65 furnaceGe Wafer Specification Growing Method: CZ Orientation: (110) + _0. 5 Deg. Wafer Size: 2" dia x 500 microns Surface Polishing: one side optical polished Surface finish (RMS or Ra) : < 30A Doping: Undoped Conductor type: N type Resistivity: > 50Ohms cm (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument.) EPD: < 5E2 cm^2 Package: under 1000 class clean room Typical Properties:"> 50 ohm.cm Metal Foils Capable for KSL-1650X-GS65 furnace"> 50 ohm.cm Metal Foils Capable for KSL-1650X-GS65 furnaceGe Wafer Specification Growing Method: CZ Orientation: (110) + _0. 5 Deg. Wafer Size: 2" dia x 500 microns Surface Polishing: one side optical polished Surface finish (RMS or Ra) : < 30A Doping: Undoped Conductor type: N type Resistivity: > 50Ohms cm (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument.) EPD: < 5E2 cm^2 Package: under 1000 class clean room Typical Properties:"> Ge Wafer (110) N-type Undoped, 2" dia x 0.5 mm, 1SP, R:>50 ohm.cm Metal Foils Capable for KSL-1650X-GS65 furnace – www.hermes-technologie.de

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Ge Wafer (110) N-type Undoped, 2" dia x 0.5 mm, 1SP, R:>50 ohm.cm Metal Foils Capable for KSL-1650X-GS65 furnace

$137.97

Quantity
50 ohm.cm Metal Foils Capable for KSL-1650X-GS65 furnace">
Description

Capable for KSL-1650X-GS65 furnace

Model EQ-MC-11-50SS Material Stainless Steel Cubage 50ml Dimension  Click the picture for more detail

The pressing die is suggested to be used with particle size < 30 mircon

Mohn hardness

Polyamide (JIS Z1714):                         0

Ge Wafer (110) N-type Undoped, 2" dia x 0.5 mm, 1SP, R:>50 ohm.cm Metal Foils Capable for KSL-1650X-GS65 furnaceGe Wafer Specification Growing Method: CZ Orientation: (110) + _0. 5 Deg. Wafer Size: 2" dia x 500 microns Surface Polishing: one side optical polished Surface finish (RMS or Ra) : < 30A Doping: Undoped Conductor type: N type Resistivity: > 50Ohms cm (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument.) EPD: < 5E2 cm^2 Package: under 1000 class clean room Typical Properties:

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