Si Wafer (111) with 4 deg, off, Prime Grade, 4" dia x 0.5 mm, 1SP, N Type, As doped, resistivity: 0.001-0.005 ohm-cm - SIAsc101D05C1deg4R0001 Ceramic & Glass Substrate A-Z 10 Specific Surface Area (m2/g)

10  Specific Surface Area (m2/g) 0

Resistivity:                     0

Capable for KSL-1650X-GS65 furnace

A KF40 glovebox Feedthrough Set (with the necessary connector to gas cylinder) is included for connecting an inert gas source to the crimper inside the glove box

5) with advantages of higher energy density and lower cost

Si Wafer (111) with 4 deg, off, Prime Grade, 4" dia x 0.5 mm, 1SP, N Type, As doped, resistivity: 0.001-0.005 ohm-cm - SIAsc101D05C1deg4R0001 Ceramic & Glass Substrate A-Z 10 Specific Surface Area (m2/g)Specifications: Single crystal Si, (CZ) (Prime Grade) Conductivity: N type ( As doped) Resistivity: 0. 001~0. 005 ohm cm (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument.) Size: 4" in diameter x 0. 525 mm Orientation: 4 degree off (111) + 0. 5 deg Polish: one side polished Surface roughness: < 5A, RMS Related Products Other Crystal Wafer A Z Plasma Cleaner Wafer Containers