Al2O3- Sapphire Wafer, C-plane (0001), 1" Dia x0.5 mm 1SP - ALC25D05C1 High-Throughput Coating 3 Pressure

3  Pressure

You may order  MSK-110 to seal GA& cell  ( Click Pic below righ )

especially for cutting non-ferrous metal samples material

5V) due to the passivation of cladding by electrolyte component (especially LiPF6 based electrolyte system) to form a layer of AlF3

Model EQ-SS-14 Material Stainless Steel Capacity 2 L

Al2O3- Sapphire Wafer, C-plane (0001), 1" Dia x0.5 mm 1SP - ALC25D05C1 High-Throughput Coating 3 PressureFeatures: Sapphire ( single crystal of Al2O3 ) is being used extensively as a substrate for III V nitrides and for many other epitaxial films Wafer size: 1" dia x 0. 5 mm thickness (0001) C plane orientation + 0. 5 Deg Polished surface: One side epi polished by special CMP technology Surface roughness: Ra < 5 A ( by AFM) Package: Each wafer is packed in 1000 class clean room with 100 grade plastic bag with wafer container Typical Properties: Crystal