Si Wafer (100), 4 " dia x 0.275 mm, P Type B doped, 1SP, Resistivities: 0.5 - 2.0 ohm-cm Mounting Presses 30 segments programmed with ramping

30 segments programmed with ramping

it has the buit-in heater which can be heated to 300C to easily regenerate the de-oxygen and dehydration chemical in the unit for long term use

Tube weight: 1 kg

Crystal growth axis

Allow temperature programming and monitoring for furnaces with 1 ~ 3 heating zones

Si Wafer (100), 4 " dia x 0.275 mm, P Type B doped, 1SP, Resistivities: 0.5 - 2.0 ohm-cm Mounting Presses 30 segments programmed with rampingSingle Crystal: Si Growth Method: CZ Type Dopant: P Boron Orientation: (100) Resistivity: 0. 5 2. 0 ohm cm (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument.) Diameter: 100 mm Thickness: 0. 275 mm + 0. 020 mm Primary Flat: <110> Polish: One side polished Minority Carrier Lifetime: 100 us Optional: you may need tool below to handle the wafer ( click picture to order ) Other