Ge Substrate (111) 10x10x 0.5 mm, 2 SP, Sb-doped, 0.005-0.01 Ohm.cm - GESbc101005S2R0005 Coated Electrode Working Temperature: < 50°C

Working Temperature:    < 50°C

(may the features only in the optional bar)

Crystal Purity: >99

Polishing:                 two side polished

Application Notes Replace tube for MTI tube furnaces Operating from 1600oC to 1750oC

Ge Substrate (111) 10x10x 0.5 mm, 2 SP, Sb-doped, 0.005-0.01 Ohm.cm - GESbc101005S2R0005 Coated Electrode Working Temperature: < 50°CSpecifications Growing Method: CZ Wafer Size: 10x10x0. 5 mm Surface Polishing: Two sides epi polished Orientation: (111) Surface roughness: < 8 A ( by AFM) Doping: Sb doped Conductor type: N type Resistivity: 0. 005 0. 01 Ohms cm EPD: N A Package: under 1000 class clean room in wafer container Related Product Other Crystal wafer A Z Plasma Cleaner Wafer Containers Dicing saw Film Coater