GaAs , Growing Method: VGF(100) Si doped, N-type, 2" dia x 0.5mm, 2sp,Carrier Concentration: (3.8-6.2) x 10^16 /cm^3 Li1.5Al0.5Ge1.5P3O12 4N/15mm wide at 200 x

4N/15mm wide at 200 x 0

The window is designed for in-situ X-Ray analysis of battery material phase variations during charging and discharging

Such an alumina tube can be used at operating temperatures of 1700 oC in both oxidizing and reducing atmospheres

EQ-Die-30D is a complete pellet pressing die with 32 mm I

Detailed dimension drawing Warning Do NOT use an alumina tube under a vacuum at a temperature > 1500 °C

GaAs , Growing Method: VGF(100) Si doped, N-type, 2" dia x 0.5mm, 2sp,Carrier Concentration: (3.8-6.2) x 10^16 /cm^3 Li1.5Al0.5Ge1.5P3O12 4N/15mm wide at 200 xGaAs single crystal wafer Growing Method: VGF Orientation: (100) Size: 2" dia x 0. 5mm Polishing: two sides polished Doping: Si doped Conductor type: S C N Carrier Concentration: (3. 8 6. 4) x 10^16 cm^3 Mobility: (3450 4150) cm^2 V. S Resistivity: (2. 74 4. 24) E 2 ohm. cm EPD: < 5000cm^2 Ra(Average Roughness) : < 0. 4 nm EPI ready surface and packing Related Products Other GaAs InSb Other InAs InP GaSb Wafer Box Film Coater RTP Furnaces