Ge Substrate (110) 5x5x 0.45-0.5 mm, 2 SP, N-type Undoped R>50 ohm.cm GaAs Vacuum Level: 1
$34.44
Description
Vacuum Level: 1
x Height) Case: 26mm(OD) x 25
MeltingPoint 585 oC
65 micro-ohm-cm
): 109 - 1011
Ge Substrate (110) 5x5x 0.45-0.5 mm, 2 SP, N-type Undoped R>50 ohm.cm GaAs Vacuum Level: 1Specifications Growing Method: CZ Wafer Size: 5x5x0. 45 0. 5 mm Surface Polishing: Two sides optical polished Orientation: (110) Surface finish (RMS or Ra) : < 30A Doping: Undoped Conductor type: N type Resistivity: > 50 Ohms cm EPD: N A Package: under 1000 class clean room in wafer container Related Product Other Crystal wafer A Z Plasma Cleaner Wafer Containers Dicing saw Film Coater
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